磷化銦單晶片（p 型）
| InP Single Crystal Wafers(p-Type) | ||||||
| Growth Method・Dopant 生長方法・參雜物 |
VGF/VB. Zn | VGF/VB. Zn | ||||
| CarrirerConcentration(cm-³) 載流子濃度 |
(4-6) E18 | (2-5) E18 | ||||
| Resistivity 電阻率 |
(2-5) E-2 | (2-7) E-2 | ||||
| Mobility (cm²/V・sec) 遷移率 |
35-60 | 50-80 | ||||
| EPD Average (cm-²) EPD平均數 |
<5000 | <2000 | <500 | <500 | <5000 | |
| Diameter (mm) 直徑 |
50.8±0.3 | 76.0±0.3 | ||||
| OF(mm) 主參考邊 |
17.0±1.0 | 22.0±1.0 | ||||
| IF(mm) 次參考邊 |
7.0±1.0 | 12.0±1.0 | ||||
| Edge Rounding (mm R) 倒角 |
0.25 (Conform to SEMI Standards) | |||||
| Thickness (um) 厚度 |
350±15 | 600±15 | ||||
| Orientation 晶向 |
(100)±0.3° | |||||
| Surface Finish 表面光潔度 |
P/E | P/E | P/E | P/E | P/E | P/E |
| P/P | P/P | P/P | P/P | P/P | P/P | |
| Surface Clean 表面潔淨度 |
Epi-Ready | |||||
| Flatness・LPD 平整度・亮點缺陷 |
Refer to Page 11 | |||||
| Package 包裝 |
Single | |||||
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