GaAs 砷化鎵 - 台定國際有限公司

GaAs 砷化鎵

2」2ﾟ GaAs wafer

Parameter	Specification	UOM
Conduct Type	S-C-N
Dopant	GaAs-Si
Orientation	(100)2°Off TowardA±0.5°
Orientation Angle	0°
OF Orientation	EJ(0-1-1)±0.5°
OF Length	17±1	mm
IF Orientation	EJ (0-11)±0.5°
IF Length	7±1	mm
Diameter	50.8±0.3	mm
CC	0.4E18~2.5E18	/c.c.
Resistivity	N/A	ohm.cm
Mobility	N/A	cm2/v.s
EPD		/cm2
Thickness	350±20	um
TTV	<10	um
TIR	N/A	um
Bow	<10	um
Warp	N/A	um
Laser Marking	N/A
Surface	Side1:Polished Side2：Etched
ParticleCount	N/A
Packaging	Cassette

4」15ﾟ GaAs wafer (1)

4」15ﾟ GaAs wafer (2)

Parameter	Specification	UOM
Conduct Type	S-C-N
Dopant	GaAs-Si
Orientation	(100)2°Off TowardA±0.5°
Orientation Angle	180°
OF Orientation	EJ(0-1-1)±0.5°
OF Length	32±1	mm
IF Orientation	EJ (0-11)±0.5°
IF Length	18±1	mm
Diameter	100±0.2	mm
CC	0.4E18~2.5E18	/c.c.
Resistivity	N/A	ohm.cm
Mobility	≥1000	cm2/v.s
EPD	≤5000	/cm2
Thickness	350±20	um
TTV	<10	um
TIR	N/A	um
Bow	N/A	um
Warp	N/A	um
Laser Marking	NONE
Surface	Side1:Polished Side2：Etched
ParticleCount	NONE
Packaging	Single wafer packaging

4」6ﾟ GaAs wafer

Parameter	Specification	UOM
Conduct Type	S-C-N
Dopant	GaAs-Si
Orientation	(100)6°±0.5°off towardA
Orientation Angle	180°
OF Orientation	EJ(0-1-1)±0.5°
OF Length	32±1	mm
IF Orientation	EJ (0-11)±0.5°
IF Length	18±1	mm
Diameter	100±0.2	mm
CC	0.5E18~3.0E18	/c.c.
Resistivity	N/A	ohm.cm
Mobility	≥1000	cm2/v.s
EPD	≤3000	/cm2
Thickness	350±20	um
TTV	<10	um
TIR	N/A	um
Bow	N/A	um
Warp	N/A	um
Laser Marking	NONE
Surface	Side1:Polished Side2：Etched
ParticleCount	NONE
Packaging	Single wafer packaging

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